Electrical Characteristics

Electrical Characteristics
(V_{DD_AFE} = V_DD = 1.8V, V_CORE = 1.1V (generated from internal LDO; 1μF bypassed to V_SS), V_LED = 5.0V, T_A = +25°C, min/max are from T_A = -40°C to +85°C, unless otherwise noted.) (Note 1)
PARAMETER	SYMBOL	CONDITIONS	MIN	TYP	MAX	UNITS
MCU POWER SUPPLIES / OPERATION
Supply Voltage	V_DD		1.71	1.8	3.63	V
Power-Fail Reset Voltage	V_RST	Monitors V_DD	1.63		1.71	V
Power-On Reset Voltage	V_POR	Monitors V_DD		1.4		V
MCU POWER SUPPLIES / SINGLE-SUPPLY OPERATION (V_DD ONLY)
V_DD Fixed Current, Deep Sleep Mode	I_{DD_FDSL}	Standby state with full data retention and 96kB SRAM retained		4.2		μA
AFE POWER SUPPLIES
Power Supply Voltage	V_{DD_AFE}		1.7	1.8	2.0	V
LED Supply Voltage	V_LED		3.1		5.5	V
V_{DD_AFE} Current in Shutdown		T_A = +25°C		0.6	3.0	μA
V_LED Current in Shutdown		T_A = +25°C			1	μA
MCU / GENERAL-PURPOSE I/O
Input-Low Voltage for RSTN, GPIO P0.1, P0.2, P0.3	V_{IL_GPIO}				0.3 × V_DD	V
Input-High Voltage for RSTN, GPIO P0.1, P0.2, P0.3	V_{IH_GPIO}		0.7 × V_DD			V
Output-Low Voltage for GPIO P0.0, P0.1	V_{OL_GPIO}	I_OL= 2mA		0.2	0.4	V
Output-High Voltage for GPIO P0.0, P0.1	V_{OH_GPIO}	I_OH= 2mA	V_DD - 0.4			V
Input Hysteresis (Schmitt)	V_IHYS			300		mV
Input/Output Pin Capacitance for All Pins	C_IO			4		pF
Input Leakage Current Low	I_IL		-500		+500	nA
Input Leakage Current High	I_IH		-500		+500	nA
Input Pullup Resistor to RSTN	R_{PU_VDD}	Pullup to V_DD= 1.62V		22		kΩ
Input Pullup Resistor to RSTN	R_{PU_VDD}	Pullup to V_DD= 3.6V		10.5		kΩ
Input Pullup Resistor for All GPIO P0.x	R_PU	Pullup to V_DD= 1.62V		22		kΩ
Input Pullup Resistor for All GPIO P0.x	R_PU	Pullup to V_DD= 3.63V		10.5		kΩ
Input Pulldown Resistor for All GPIO P0.x	R_PD	Pulldown to V_SS, V_DD= 1.62V		20		kΩ
MCU / FLASH MEMORY
Flash Erase Time	t_{M_ERASE}	Mass erase		30		ms
Flash Erase Time	t_{P_ERASE}	Page erase		30		ms
Flash Programming Time Per Word	t_PROG			60		μs
Flash Endurance			10			kCYCLES
Data Retention	t_RET	T_A = +85°C	10			YEARS
MCU / IO BUSES / SPI / MASTER MODE
Input-Low Voltage for GPIO SPI P0.4	V_{IL_SPI}		V_SS		0.3 x V_DD	V
Input-High Voltage for GPIO SPI P0.4	V_{IH_SPI}		0.7 x V_DD		V_DD	V
Output-Low Voltage for GPIO SPI P0.5, P0.6	V_{OL_SPI}	I_OL = 2mA			0.4	V
Output-High Voltage for GPIO SPI P0.5, P0.6	V_{OH_SPI}	I_OH= 2mA	V_DD - 0.4			V
SPI Master Operating Frequency	f_MCK				48	MHz
SPI Master SCLK Period	t_MCK			1/f_MCK		ns
SCLK Output Pulse-Width High/Low	t_MCH, t_MCL		t_MCK/2			ns
MOSI Output Hold Time After SCLK Sample Edge	t_MOH		t_MCK/2			ns
MOSI Output Valid to Sample Edge	t_MOV		t_MCK/2			ns
MISO Input Valid to SCLK Sample Edge Setup	t_MIS			5		ns
MISO Input to SCLK Sample Edge Hold	t_MIH			t_MCK/2		ns
MCU / IO BUSES / I²C / FAST MODE
Input-Low Level Voltage for GPIO I²C P0.8, P0.9	V_{IL_I2C}				0.3 x V_DD	V
Input-High Level Voltage for GPIO I²C P0.8, P0.9	V_{IH_I2C}		0.7 x V_DD			V
Output-Low Level Voltage for GPIO I²C P0.8, P0.9	V_{OL_I2C}	I_{OL_I2C}= 2mA		0.2	0.4	V
Output-High Level Voltage for GPIO I²C P0.8, P0.9	V_{OH_I2C}	I_{OH_I2C} = 2mA	V_DD - 0.4			V
Output Fall Time	t_OF	From V_{OH_I2C(MIN)} to V_{OL_I2C(MAX)}		150		ns
Pulse Width Suppressed by Input Filter	t_SP			75		ns
SCL Clock Frequency	f_SCL		0		400	kHz
Low-Period SCL Clock	t_LOW		1.3			μs
High-Time SCL Clock	t_HIGH		0.6			μs
Setup Time for Repeated Start Condition	t_{SU_STA}		0.6			μs
Hold Time for Repeated Start Condition	t_{HD_STA}		0.6			μs
Data Setup Time	t_{SU_DAT}			125		ns
Data Hold Time	t_{HD_DAT}			10		ns
Rise Time for SDA and SCL	t_R			30		ns
Fall Time for SDA and SCL	t_F			30		ns
Setup Time for a Stop Condition	t_{SU_STO}		0.6			μs
Bus-Free Time Between a Stop and Start Condition	t_BUS		1.3			μs
Data Valid Time	t_{VD_DAT}		0.9			μs
Data Valid Acknowledge Time	t_{VD_ACK}		0.9			μs
AFE / READOUT CHANNEL
ADC Resolution				19		BITS
Maximum ADC Full-Scale Input Current				32.0		μA
Minimum ADC Integration Time	t_INT			14.8		μs
Maximum ADC Integration Time	t_INT			117.3		μs
Sample Rate Error		From nominal			±2.5	%
Maximum DC Ambient Light Input Range	ALR			100		μA
AC Ambient Light Rejection	AC_ALRR	I_AMBIENT= 1μA DC with ±0.4μA_P-P 120Hz sine wave		70		dB
DC Ambient Light Rejection		I_AMBIENT modulated between 0μA and 30μA, ADC integration time = 117.3μs		0.5		nA
Dark Current Input Referred Noise		ADC integration time = 14.8μs		262		pA_RMS
Dark Current Input Referred Noise		ADC integration time = 117.3μs		56		pA_RMS
Maximum Photodiode Input Capacitance	C_PD			65		pF
V_DD DC PSR		I_AMBIENT= 0μA, V_DD= 1.7V to 2.0V, T_A= +25°C	-560	-330	+560	LSB/V
AFE / LED Driver
LED Current Resolution				8		BITS
Full-Scale LED Current	I_LED	Maximum configurable LED current	114	124	132	mA
Minimum Output Voltage	V_OL	Full-scale LED current		700		mV
LED Driver DC PSR		V_{DD_AFE}= 1.8V, V_{LEDx_DRV}= 0.9V, V_LED= 3.1V to 5.5V, I_LED= 124mA, T_A= +25°C		-1	+400	μA/V
LED Driver DC PSR		V_{DD_AFE}= 1.7V to 2.0V, T_A= +25°C, I_LED= 124mA		150	1500	μA/V
PHOTODIODE
Wavelength of Peak Sensitivity				860		nm
Spectral Bandwidth Range				420 to 1020		nm

Note 1:

All devices are 100% production tested at TA = +25°C. Specifications over temperature limits are guaranteed by Maxim
Integrated’s bench or proprietary automated test equipment (ATE) characterization.

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