Electrical Characteristics

Electrical Characteristics
(Limits are 100% tested at T_A = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and characterization.)
PARAMETER	SYMBOL	CONDITIONS	MIN	TYP	MAX	UNITS
GENERAL ELECTRICAL CHARACTERISTICS
Battery Only Quiescent Current	I_{BATT_Q}	USBC as UFP and BATT = SYS = 3.6V		30	50	µA
SWITCHING MODE CHARGER
CHGIN Voltage Range	V_CHGIN	Operating voltage (Note 1)	V_{CHGIN_UVLO}		V_{CHGIN_OVLO}	V
CHGIN Overvoltage Threshold	V_{CHGIN_OVLO}	V_CHGIN rising	13.4	13.7	14	V
CHGIN Overvoltage-Threshold Hysteresis	V_{CHGINH_OVLO}	V_CHGIN falling		300		mV
CHGIN to GND Minimum Turn-On Threshold Accuracy	V_{CHGIN_UVLO}	V_CHGIN rising	4.6	4.7	4.8	V
CHGIN to SYS Minimum Turn-On Threshold	V_CHGIN2SYS	V_CHGIN rising	V_SYS + 0.12	V_SYS + 0.20	V_SYS + 0.28	V
CHGIN Adaptive Voltage Regulation Threshold Accuracy	V_{CHGIN_REG}		4.4	4.5	4.6	V
CHGIN Current Limit Range	CHGIN_ILIM	Automatically configured after charger type detection	0.5		3.0	A
CHGIN Supply Current	I_IN	V_CHGIN = 5.0V, charger enabled, V_SYS = V_BATT = 4.5V, (no switching, battery charged)		2.7	4	mA
V_CHGIN Input Current Limit	I_INLIMIT	Charger enabled, 500mA input current setting	423	460	500	mA
		Charger enabled, 1500mA input current setting	1300	1400	1500
		Charger enabled, 3000mA input current setting	2600	2800	3000
CHGIN Self-Discharge Down to UVLO Time	t_INSD	Time required for the charger input to cause CHGIN capacitor to decay from 6.0V to 4.3V		100		ms
CHGIN Input Self-Discharge Resistance	R_INSD			44		kΩ
CHGIN to BYP Resistance	R_CHGIN2BYP	Bidirectional		21.5		mΩ
LX High-Side Resistance	R_HS			44		mΩ
LX Low-Side Resistance	R_LS			42		mΩ
BATT to SYS Dropout Resistance	R_BAT2SYS			13		mΩ
CHGIN to BATT Dropout Resistance	R_CHGIN2BAT	Calculation estimates a 0.04Ω inductor resistance (R_L) R_CHGIN2BAT = R_CHGIN2BYP+ R_HS+ R_L+ R_BAT2SYS		118.5		mΩ
LX Leakage Current		LX = PGND or BYP, T_A = +25°C		0.01	10	µA
LX Leakage Current		LX = PGND or BYP, T_A = +85°C		1		µA
BST Leakage Current		BST = PGND or 1.8V, T_A = +25°C		0.01	10	µA
BST Leakage Current		BST = PGND or 1.8V, T_A = +85°C		1		µA
BYP Leakage Current		V_BYP = 5V, V_CHGIN = 0V, LX = 0V, charger disabled, T_A = +25°C		0.01	10	µA
BYP Leakage Current		V_BYP = 5V, V_CHGIN = 0V, LX = 0V, charger disabled, T_A = +85°C		1		µA
SYS Leakage Current		V_SYS = 0V, V_BATT = 4.2V, charger disabled, T_A = +25°C		0.01	10	µA
SYS Leakage Current		V_SYS = 0V, V_BATT = 4.2V, charger disabled, T_A = +85°C		1		µA
Minimum ON Time	t_ON-MIN			75		ns
Minimum OFF Time	t_OFF-MIN			75		ns
Buck Current Limit	I_LIM		5.16	6.0	6.84	A
Reverse Boost Quiescent Current		Non-switching; output forced 200mV above its target regulation voltage		2000		µA
Reverse Boost BYP Voltage in OTG Mode	V_BYP.OTG		4.94	5.1	5.26	V
CHGIN Output Current Limit	I_{CHGIN.OTG.LIM}	3.4V < V_BATT < 4.5V	1500		1725	mA
Reverse Boost Output Voltage Ripple		Discontinuous inductor current (i.e., skip mode)		±150		mV
Reverse Boost Output Voltage Ripple		Continuous inductor current		±150		mV
BATT Regulation Voltage Accuracy		T_A = +25°C, BATT regulation voltage (See the Ordering Information table)	-0.9	-0.3	+0.3	%
BATT Regulation Voltage Accuracy		T_A = 0°C to +85°C, BATT regulation voltage (See the Ordering Information table)	-1	-0.3	+0.5	%
Fast-Charge Current Program Range		External resistor programmable	0.5		3.15	A
Fast-Charge Currents	I_FC	V_BATT > V_SYSMIN, programmed for 3.0A	2850	3000	3150	mA
		V_BATT > V_SYSMIN, programmed for 2.0A	1900	2000	2100
		V_BATT > V_SYSMIN, programmed for 0.5A	465	500	535
Trickle Charge Threshold	V_TRICKLE	V_BATT rising for termination voltage from 4.1V to 4.5V; trickle charge is disabled for 3.6V option	3.0	3.1	3.2	V
Precharge Threshold	V_PRECHG	V_BATT rising	2.4	2.5	2.6	V
Prequalification Threshold Hysteresis	V_PQ-H	Applies to both V_TRICKLE and V_PRECHG		100		mV
Trickle Charge Current	I_TRICKLE	I_TRICKLE for termination voltage from 4.1V to 4.5V option; trickle charge is disabled for 3.6V option	270	300	330	mA
Precharge Charge Current	I_PRECHG		40	55	80	mA
Charger Restart Threshold	V_RSTRT		50	100	150	mV
Charger Restart Deglitch Time		10mV overdrive, 100ns rise time		130		ms
Top-Off Current Program Range	I_TO	See Table 3	50		150	mA
Top-Off Current Accuracy	I_TO	Programmed for 150mA	130	150	170	mA
Top-Off Current Accuracy	I_TO	Programmed for 50mA	25	50	75	mA
Charge Termination Deglitch Time	t_TERM	2mV overdrive, 100ns rise/fall time		30		ms
Charger Soft-Start Time	t_SS			1.5		ms
BATT to SYS Reverse Regulation Voltage	V_BSREG	I_BATT = 10mA		70		mV
BATT to SYS Reverse Regulation Voltage	V_BSREG	Load regulation during the reverse regulation mode		1		mV/A
Minimum SYS Voltage	V_SYSMIN	For termination voltage from 4.1V to 4.5V		3.5		V
Minimum SYS Voltage	V_SYSMIN	For 3.6V termination voltage		3.0		V
Minimum SYS Voltage Accuracy	V_SYSMIN		-3		+3	%
Prequalification Time	t_PQ	Applies to both low-battery precharge and trickle modes		30		min
Fast-Charge Constant Current Plus Fast-Charge Constant Voltage Time	t_FC			6		h
Top-Off Time	t_TO			30		s
Timer Accuracy			-20		+20	%
Junction Temperature Thermal Regulation Loop Setpoint Program Range	T_REG	Junction temperature when charge current is reduced		130		°C
Thermal Regulation Gain	AT_JREG	I_FC = 3.15A		-157.5		mA/°C
THM Threshold, COLD	THM_COLD	V_THM/V_PVL rising, 1% hysteresis (thermistor temperature falling)	72.5	74	75.5	%
THM Threshold, COOL	THM_COOL	V_THM/V_PVL rising, 1% hysteresis (thermistor temperature falling)	63.5	65	66.5	%
THM Threshold, WARM	THM_WARM	V_THM/V_PVL falling, 1% hysteresis (thermistor temperature rising)	31	32.5	34	%
THM Threshold, HOT	THM_HOT	V_THM/V_PVL falling, 1% hysteresis (thermistor temperature rising)	21.5	23	24.5	%
Charger Disable Threshold	V_{CHGR_EN}	V_THM/V_PVL falling, 1% hysteresis (charger is disabled below this threshold)	4.5	6	7.5	%
THM Input Leakage Current		V_THM = GND or V_PVL; T_A = +25°C		0.1	1	μA
THM Input Leakage Current		V_THM = GND or V_PVL; T_A = +85°C		0.1		μA
Battery Overcurrent Threshold	I_BOVCR			6.0		A
Battery Overcurrent Debounce Time	t_BOVRC		6			ms
Battery Overcurrent Retry	t_{OCP_RETRY}			0.15		s
Battery Overcurrent Protection Quiescent Current	I_BOVRC			3 + I_BATT /18040		µA
System Power-Up Current	I_SYSPU		35	50	80	mA
System Power-Up Voltage	V_SYSPU	V_SYS rising, 100mV hysteresis	1.9	2.0	2.1	V
INOKB, STAT
Logic Input Leakage Current				0.1	1	µA
Output Low Voltage INOKB, STAT		I_source = 5mA			0.4	V
Output High Leakage INOKB, STAT		V_SYS = 5.5V, T_A = +25°C	-1	0	+1	µA
Output High Leakage INOKB, STAT		V_SYS = 5.5V, T_A = +85°C		0.1		µA
ENBST
ENBST Logic Input Low Threshold	V_IL				0.4	V
ENBST Logic Input High Threshold	V_IH		1.4			V
ENBST Logic Input Leakage Current	I_ENBST	ENBST = 5.5V (including current through pulldown resistor)		24	60	µA
ENBST Pulldown Resistor	R_ENBST			235		kΩ
CHARGER DETECTION
BC1.2 State Timeout	t_TMO		180	200	220	ms
Data Contact Detect Time-Out	t_DCDtmo		700	800	900	ms
Proprietary Charger Debounce	t_PRDeb		5	7.5	10	ms
Primary to Secondary Timer	t_PDSDWait		27	35	39	ms
Charger Detection Debounce	t_CDDeb		45	50	55	ms
VBUS64 Threshold	V_BUS64	DP and DN pins; threshold in percent of V_BUS voltage 3V < V_BUS < 5.5V	57	64	71	%
VBUS64 Hysteresis	V_{BUS64_H}			0.015		V
VBUS47 Threshold	V_BUS47	DP and DN pins; threshold in percent of V_BUS voltage 3V < V_BUS < 5.5V	43.3	47	51.7	%
VBUS47 Hysteresis				0.015		V
VBUS31 Threshold	V_BUS31	DP and DN pins; threshold in percent of V_BUS voltage 3V < V_BUS < 5.5V	26	31	36	%
VBUS31 Hysteresis				0.015		V
IWEAK Current	I_WEAK		0.01	0.1	0.5	µA
RDM_DWN Resistor	R_{DM_DWN}		14.25	20	24.8	kΩ
IDP_SRC Current	I_{DP_SRC}/I_DCD	Accurate over 0V to 2.5V	7	10	13	µA
IDM_SINK Current	I_{DM_SINK}/ I_DATSINK	Accurate over 0.15V to 3.6V	45	80	125	µA
VLGC Threshold	V_LGC		1.62	1.7	1.9	V
VLGC Hysteresis	V_{LGC_H}			0.015		V
VDAT_REF Threshold	V_{DAT_REF}		0.25	0.32	0.4	V
VDAT_REF Hysteresis	V_{DAT_REF_H}			0.015		V
VDN_SRC Voltage	V_{DN_SRC}/ V_SRC06	Accurate over I_LOAD = 0 to 200µA	0.5	0.6	0.7	V
VDP_SRC Voltage	V_{DP_SRC}/ V_SRC06	Accurate over I_LOAD = 0 to 200µA	0.5	0.6	0.7	V
COMP2 Load Resistor	R_USB	Load resistor on DP/DN	3	6.1	12	MΩ
CC DETECTION
CC Pin Voltage in DFP 1.5A Mode	V_{CC_PIN}	Measured at CC pins with 126kΩ load; IDFP1.5_CC enable and V_AVL ≥ 2.5V	1.85			V
CC Pin Clamp Voltage	V_{CC_ClAMP}	60µA ≤ I_{CC_}≤ 600µA		1.1	1.32	V
CC Pin Clamp Voltage (5.5V)		I_{CC_} < 2mA		5.25	5.5	V
CC UFP Pulldown Resistance	R_{PD_UFP}		-10%	5.1K	+10%	Ω
CC DFP 1.5A Current Source	I_{DFP1.5_CC}		-8%	180	+8%	µA
CC RA RD Threshold	V_{RA_RD0.5}		0.15	0.2	0.25	V
CC UFP 0.5A RD Threshold	V_{UFP_RD0.5}		0.61	0.66	0.7	V
CC UFP 0.5A RD Hysteresis	V_{UFP_RD0.5_H}			0.015		V
CC UFP 1.5A RD Threshold	V_{UFP_RD1.5}		1.16	1.23	1.31	V
CC UFP 1.5A RD Hysteresis	V_{UFP_RD1.5_H}			0.15		V
CC Pin Power-Up Time	t_ClampSwap	Max time allowed from removal of voltage clamp till 5.1kΩ resistor attached			15	ms
CC Detection Debounce	t_CCDeb		100	119	200	ms
Type-C Debounce	t_PDDeb		10	15	20	ms
Type-C Quick Debounce	t_QDeb		0.9	1	1.1	ms

Note 1:

The CHGIN input must be less than V_{CHGIN_OVLO} and greater than both V_{CHGIN_UVLO} and V_CHGIN2SYS for the charger to turn on.

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