Electrical Characteristics

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Electrical Characteristics

(Global conditions: RSRA = 120kΩ, VTVL = 1V, VTVT = 0.5V, Typical values are at VHP - VHN = 9V, TA = +25°C, unless otherwise noted.) (Note 1)

DC CHARACTERISTICS / POWER SUPPLY (VCC, VRAW, HP, HN)
Supply Voltage VHP - VHN DC input voltage, excluding superimposed HBS data signals 9 24 V
VRAWI External voltage applied to VRAW 4.6 24
VRAW Output Voltage VRAWO VHP - VHN = 9V, IRAW = 0mA 7.4 7.7 V
VHP - VHN = 9V, IRAW = 200mA 6.9 7.3
VCC Output Voltage VCC ILOAD = 70mA, VRAW ≥ 6V 4.5 5.0 5.5 V
Supply Current IHP, IHN VRST = VCC, ICC = 0mA, VHP - VHN = 9V 3 5 mA
IRAW VRST = VCC, HP = CAPP = VRAW, HN = CAPN = GND 2.5 4.0
HP = CAPP = VRAW, VRST = HN = CAPN = GND, DIN at 57.6kbps, RLOAD = 100Ω 25
Maximum VCC Load Current IVCCMAX VHP - VHN ≥ 9V, including IRAW 70 mA
Maximum VRAW Load Current IVRAWMAX VHP - VHN ≥ 9V, excluding superimposed HBS data signals 200 mA
DC CHARACTERISTICS / TRANSMIT CHANNEL (AIO, BIO, TERM)
Output Voltage High VTOH AIO, BIO to GND, VRAW ≥ 4.6V, ILOAD = 45mA to GND VCC - 0.6 V
Output Voltage Low VTOL AIO, BIO to GND, VRAW ≥ 4.6V, ILOAD = 45mA to VCC 0.6 V
Termination Switch On Resistance RTERM TERM to AIO 2.5 5 10
AIO, BIO Transmit Input Resistance RIN Input resistance of AIO and BIO when they are unconnected, DIN = VCC 7 10 13 kΩ
Bias Voltage Ratio Matching VAIO / VBIO AIO, BIO unconnected -1 +1 %
DC CHARACTERISTICS / RECEIVE CHANNEL (TVL, TVT)
Receive Threshold Leading Edge VLEAD VTVL = 1.0V, HPEN = VCC 0.85 1 1.15 V
Receive Threshold Trailing Edge VTRAIL VTVT = 0.5V, HPEN = VCC 0.35 0.5 0.65 V
TVL and TVT Input Leakage Current ITHLEAK VTVT = VTVL = 2.5V -1 +1 μA
DC CHARACTERISTICS / DIGITAL I/O
Input Logic-High VIH 1.4 V
Input Logic-Low VIL 0.4 V
Input Leakage Current ILEAK -1 +1 μA
Open-Drain Logic-Low VOL ISINK = 2mA 0.3 V
Open-Drain Leakage IODL VOUT = 5V, output not asserted 1 μA
AC CHARACTERISTICS / TRANSMIT CHANNEL (Note 3)
Output Rise Time Leading Edge tRLD RSRA = 120kΩ, RLOAD = 200Ω, Figure 1 0.8 1.4 2.0 μs
Output Fall Time Leading Edge tFLD RSRA = 120kΩ, RLOAD = 200Ω, Figure 1 0.8 1.4 2.0 μs
Output Rise Time Trailing Edge tRTR RSRA = 120kΩ, RLOAD = 200Ω, Figure 1 0.8 1.4 2.0 μs
Output Fall Time Trailing Edge tFTR RSRA = 120kΩ, RLOAD = 200Ω, Figure 1 0.8 1.4 2.0 μs
Transmit Propagation Delay tTPROP RSRA = 120kΩ, RLOAD = 200Ω, Figure 1 1.2 μs
Transmission Output Symmetry tSYM RSRA = 120kΩ, RLOAD = 200Ω, Figure 1 -0.4 0 +0.4 μs
Termination Switching Delay tTERM RSRA = 120kΩ, RLOAD = 200Ω, Figure 2 0.5 μs
Termination On-Time tTRMON RSRA = 120kΩ, RLOAD = 200Ω, Figure 2 19 34 63 μs
AC CHARACTERISTICS / RECEIVE CHANNEL (Note 3)
Receive Propagation Delay tRPROP HPEN = VCC, Figure 3 1 μs
Receiver High Pass Filter Time Constant tHP HPEN = GND 1200 μs
PROTECTION
ESD Protection AIO, BIO, TERM, HP, HN to GND (Note 2) IEC 61000-4-2 air-gap discharge ±15 kV
IEC 61000-4-2 contact discharge ±8
ESD Protection VESD Human Body Model ±4 kV
Thermal Shutdown TSHDN Junction temperature rising +150 °C
Thermal Shutdown Hysteresis TSHDN_HYST 20 °C
Note 1: Limits are 100% tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design.
Note 2: Both air-gap and contact ESD are tested with no power connected to HP, HN, VRAW, or VCC.
Note 3: Not production tested. Guaranteed by design.
Figure 1. Transmit Channel Timing Diagram
Figure 2. Transmission Switch Delay and Termination On-Time
Figure 3. Receive Propagation Delay

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