Application Circuits
Typical Application Circuits
Typical Application Circuit—Independent Mode
RU PA ARRAY
RU PA ARRAY
22µF
22µF
PA
PA
22µF
22
µF
PA
PA
22µF
22µF
PA
PA
22µF
22µF
PA
PA
Ground.
GND
GND
Overcurrent Shutdown Delay Setting. Connect a resistor to GND to configure shut down delay to be 12µs, 100µs, 1ms, 10ms in current limit event.
DLY
DLY
Supply Voltage Input. IN is connected to the drain of internal MOSFET. Apply at least 1µF capacitor at IN. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive transients in the case of fast output short event.
IN
IN
OUT
OUT
1
1
Active-High Enable Input 1. Internally pulled up to 2V. The pin can be also externally pulled up to logic-high state to enable the output 1.
EN1
EN1
OUT
OUT
2
2
Current Limit Threshold Setting and Current Monitor Output for Channel 1. This pin sources a scaled-down internal MOSFET current. Connect a resistor to GND to set current limit threshold between 0.5A and 1.5A, and convert current to voltage for current motoring. This pin can not be floating.
IMON1
IMON1
48V
48V
Current Limit Threshold Setting and Current Monitor Output for Channel 2. This pin sources a scaled-down internal MOSFET current. Connect a resistor to GND to set current limit threshold between 0.5A and 1.5A, and convert current to voltage for current motoring. This pin can not be floating.
IMON2
IMON2
ALRT_
ALRT_
1µF
1µF
Active-High Enable Input 2. Internally pulled up to 2V. The pin can be also externally pulled up to logic-high state to enable the output 2.
EN2
EN2
ENABLE CONTROL
ENABLE
CONTROL
LOAD MONITOR
LOAD
MONITOR
Typical Application Circuit—Parallel Mode
RU PA ARRAY
RU PA ARRAY
22µF
22µF
PA
PA
22µF
22µF
PA
PA
22µF
22µF
PA
PA
22µF
22µF
PA
PA
Ground.
GND
GND
Overcurrent Shutdown Delay Setting. Connect a resistor to GND to configure shut down delay to be 12µs, 100µs, 1ms, 10ms in current limit event.
DLY
DLY
Supply Voltage Input. IN is connected to the drain of internal MOSFET. Apply at least 1µF capacitor at IN. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive transients in the case of fast output short event.
IN
IN
OUT
OUT
1
1
Active-High Enable Input 1. Internally pulled up to 2V. The pin can be also externally pulled up to logic-high state to enable the output 1.
EN1
EN1
Supply Voltage Input. IN is connected to the drain of internal MOSFET. Apply at least 1µF capacitor at IN. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive transients in the case of fast output short event.
IN
IN
OUT
OUT
2
2
Current Limit Threshold Setting and Current Monitor Output for Channel 1. This pin sources a scaled-down internal MOSFET current. Connect a resistor to GND to set current limit threshold between 0.5A and 1.5A, and convert current to voltage for current motoring. This pin can not be floating.
IMON1
IMON1
48V
48V
Current Limit Threshold Setting and Current Monitor Output for Channel 2. This pin sources a scaled-down internal MOSFET current. Connect a resistor to GND to set current limit threshold between 0.5A and 1.5A, and convert current to voltage for current motoring. This pin can not be floating.
IMON2
IMON2
ALRT_
ALRT_
1µF
1µF
Active-High Enable Input 2. Internally pulled up to 2V. The pin can be also externally pulled up to logic-high state to enable the output 2.
EN2
EN2
ENABLE CONTROL
ENABLE
CONTROL
LOAD MONITOR
LOAD
MONITOR
