| PIN | NAME | FUNCTION | |
| 16 WLP | 24 TQFN | ||
| A1, A2, A3, A4 | 15,16 | IN | Supply Voltage Input. IN is connected to the drain of internal MOSFET. Apply at least 1µF capacitor at IN. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive transients in the case of fast output short event. |
| B3, B4 | 19, 20 | OUT1 | Power Output 1. Source of the internal power MOSFET1. In parallel mode It shall be connected to OUT2 to scale the current capability. |
| B1, B2 | 11, 12 | OUT2 | Power Output 2. Source of the internal power MOSFET2. In parallel mode, it should be connected to OUT1 to scale the current capability. |
| D3 | 3 | IMON1 | Current Limit Threshold Setting and Current Monitor Output for Channel 1. This pin sources a scaled-down internal MOSFET current. Connect a resistor to GND to set current limit threshold between 0.5A and 1.5A, and convert current to voltage for current motoring. This pin can not be floating. |
| D1 | 5 | IMON2 | Current Limit Threshold Setting and Current Monitor Output for Channel 2. This pin sources a scaled-down internal MOSFET current. Connect a resistor to GND to set current limit threshold between 0.5A and 1.5A, and convert current to voltage for current motoring. This pin can not be floating. |
| C4 | 24 | EN1 | Active-High Enable Input 1. Internally pulled up to 2V. The pin can be also externally pulled up to logic-high state to enable the output 1. |
| C3 | 1 | EN2 | Active-High Enable Input 2. Internally pulled up to 2V. The pin can be also externally pulled up to logic-high state to enable the output 2. |
| C1 | 7 |
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| C2 | 6 |
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| D4 | 2 | DLY | Overcurrent Shutdown Delay Setting. Connect a resistor to GND to configure shut down delay to be 12µs, 100µs, 1ms, 10ms in current limit event. |
| D2 | 4 | GND | Ground. |
| — | — | EP | Exposed Pad. Connect EP to a large GND plane with several thermal vias for best thermal performance. Refer to the MAX15162 EV kit data sheet for a reference layout design. |