Functional Diagram
Functional Diagrams
Block Diagram
Supply Voltage Input. IN is connected to the drain of internal MOSFET. Apply at least 1µF capacitor at IN. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive transients in the case of fast output short event.
IN
IN
Power Output 1. Source of the internal power MOSFET1. In parallel mode It shall be connected to OUT2 to scale the current capability.
OUT1
OUT1
Power Output 2. Source of the internal power MOSFET2. In parallel mode, it should be connected to OUT1 to scale the current capability.
OUT2
OUT2
HV FET1 CONTROL
HV FET1
CONTROL
HV FET2 CONTROL
HV FET2
CONTROL
CHARGE PUMP
CHARGE
PUMP
CONTROL LOGIC
CONTROL LOGIC
THERMAL SHUTDOWN
THERMAL
SHUTDOWN
Active-High Enable Input 1. Internally pulled up to 2V. The pin can be also externally pulled up to logic-high state to enable the output 1.
EN1
EN1
Active-High Enable Input 2. Internally pulled up to 2V. The pin can be also externally pulled up to logic-high state to enable the output 2.
EN2
EN2
Ground.
GND
GND
ALERT2
ALERT2
ALERT1
ALERT1
INTERNAL REGULATOR
INTERNAL
REGULATOR
VDD
V
DD
VDD
V
DD
Overcurrent Shutdown Delay Setting. Connect a resistor to GND to configure shut down delay to be 12µs, 100µs, 1ms, 10ms in current limit event.
DLY
DLY
Current Limit Threshold Setting and Current Monitor Output for Channel 2. This pin sources a scaled-down internal MOSFET current. Connect a resistor to GND to set current limit threshold between 0.5A and 1.5A, and convert current to voltage for current motoring. This pin can not be floating.
IMON2
IMON2
Current Limit Threshold Setting and Current Monitor Output for Channel 1. This pin sources a scaled-down internal MOSFET current. Connect a resistor to GND to set current limit threshold between 0.5A and 1.5A, and convert current to voltage for current motoring. This pin can not be floating.
IMON1
IMON1
CURRENT MONITOR
CURRENT
MONITOR
VREF
V
REF
VREF
V
REF
Timing Diagram
Supply Voltage Input. IN is connected to the drain of internal MOSFET. Apply at least 1µF capacitor at IN. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive transients in the case of fast output short event.
IN
IN
Supply Voltage Input. IN is connected to the drain of internal MOSFET. Apply at least 1µF capacitor at IN. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive transients in the case of fast output short event.
IN
VDD
V
DD
V
DD
EN_
EN_
EN_
ALRT_
ALRT_
ALRT_
UVLO
UVLO
UVLO
TDEB
T
DEB
T
DEB
DEBOUNCE TIME
DEBOUNCE TIME
DEBOUNCE TIME
OUT_
OUT_
OUT_
Supply Voltage Input. IN is connected to the drain of internal MOSFET. Apply at least 1µF capacitor at IN. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive transients in the case of fast output short event.
IN
IN
Supply Voltage Input. IN is connected to the drain of internal MOSFET. Apply at least 1µF capacitor at IN. Bypass IN with a transient voltage-suppressor diode to GND for clamping inductive transients in the case of fast output short event.
IN
VDD
V
DD
V
DD
EN_
EN_
EN_
OUT_
OUT_
OUT_
ALRT_
ALRT_
ALRT_
UVLO
UVLO
UVLO
DEBOUNCE TIME
DEBOUNCE TIME
DEBOUNCE TIME
TDEB
T
DEB
T
DEB
Note:VDD is internal regulator voltage.
NOTE: V
DD
IS INTERNAL REGULATOR VOLTAGE.
NOTE: V
DD
IS INTERNAL REGULATOR VOLTAGE.
